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The paper describes an approach for increasing of density of field-effect heterotransistors in a sense-amplifier based flip-flop. To illustrate the approach, we consider manufacturing of an amplifier of power in a heterostructure with specific configuration. One shall dope some specific areas of the heterostructure by diffusion or ion implantation. After that, it should be done optimized annealing of radiation defects and/or dopant. We introduce an approach for decreasing of stress between layers of heterostructure. Furthermore, it has been considered an analytical approach for prognosis of heat and mass transport in heterostructures, which can be take into account mismatch-induced stress.