On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter

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E. L. Pankratov

Abstract

In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with


special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.

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Research Article

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