On Approach to Increase Integration Rate of Elements of a Current Source Circuit On Approach to Increase Integration Rate of Elements of a Current Source Circuit

Abstract

In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.