On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter

Main Article Content

E. L. Pankratov

Abstract

In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with


special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.

Article Details

How to Cite
Pankratov, E. L. (2020). On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter: On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter. Asian Journal of Mathematical Sciences(AJMS), 4(3). https://doi.org/10.22377/ajms.v4i3.282
Section
Research Article