On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured

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E. L. Pankratov

Abstract

In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.

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How to Cite
Pankratov, E. L. (2019). On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured: On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured. Asian Journal of Mathematical Sciences(AJMS), 3(3). Retrieved from https://ajms.in/index.php/ajms/article/view/217
Section
Research Article

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