On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter
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Abstract
In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with
special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.
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How to Cite
Pankratov, E. L. (2020). On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter: On Approach to Increase Integration Rate of Elements of a Switched-capacitor Step-down DC-DC Converter. Asian Journal of Mathematical Sciences(AJMS), 4(3). https://doi.org/10.22377/ajms.v4i3.282
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Research Article
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