On Approach to Increase Integration Rate of Elements of a Current Source Circuit On Approach to Increase Integration Rate of Elements of a Current Source Circuit
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Abstract
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
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Research Article
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