On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit

Abstract

In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.