On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP Voltage Differencing Inverting Buffered Amplifier Manufactured
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In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
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