Main Article Content
In this paper, we introduce an approach for prognosis of manufacturing of voltage divider biasing common emitter amplifier based on bipolar transistors with account mismatch-induced stress. Based on this prognosis, we formulate some recommendations for optimization of manufacturing of the amplifier. Main aims of the optimization are as follows: (1) Decreasing dimensions of elements of the considered operational amplifier and (2) increasing of performance and reliability of the considered bipolar transistors. Dimensions of considered bipolar transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above bipolar transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of the properties of heterostructure. Choosing of inhomogeneity properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.